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WeEn Semiconductors Co., Ltd

WeEn Semiconductors Co., Ltd

- WeEn Semiconductors Co., Ltd, is the global joint venture between NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd (JAC Capital). WeEn Semiconductors was officially opened on 19th January, 2016 with the business and operations center located in Shanghai, China. WeEn Semiconductors is registered at Nanchang city which is the capital city of Jiangxi province, China. It fully owns subsidiaries and branches in Jilin city for bipolar production, in Shanghai and the United Kingdom for R&D and production support, in Hong Kong for Sales activities, and in many other countries for sales and customer services, respectively.
Imagen Número de pieza Descripción Ver
NURS360BJ Image NURS360BJ DIODE GEN PURP 600V 3A SOD132 Investigación
BTA202X-800E/L01,1 Image BTA202X-800E/L01,1 TRIAC SENS GATE 800V 2A TO220F Investigación
BT151-800R,127 Image BT151-800R,127 THYRISTOR 12A 800V TO220AB Investigación
BT138B-800E,118 Image BT138B-800E,118 TRIAC SENS GATE 800V 12A D2PAK Investigación
ACTT10-800EQ Image ACTT10-800EQ TRIAC SENS GATE 800V 10A TO220AB Investigación
BTA216-600E,127 Image BTA216-600E,127 TRIAC SENS GATE 600V 16A TO220AB Investigación
NUR460P/L04U Image NUR460P/L04U DIODE GEN PURP 600V 4A DO201AD Investigación
BTA410Y-600CT,127 Image BTA410Y-600CT,127 TRIAC 600V 10A TO220AB Investigación
BYV25FB-600,118 Image BYV25FB-600,118 DIODE GEN PURP 600V 5A D2PAK Investigación
BT151-800C,127 Image BT151-800C,127 THYRISTOR 12A 800V TO220AB Investigación
BTA420X-800CT,127 Image BTA420X-800CT,127 TRIAC 800V 20A TO220F Investigación
BT137X-800/L02,127 Image BT137X-800/L02,127 TRIAC 800V 8A TO220F Investigación
BUJ105A,127 Image BUJ105A,127 TRANS NPN 400V 8A TO220AB Investigación
BYC15X-600,127 Image BYC15X-600,127 DIODE GEN PURP 500V 15A TO220F Investigación
BT138X-800E,127 Image BT138X-800E,127 TRIAC SENS GATE 800V 12A TO220-3 Investigación
BTA316-800B0,127 Image BTA316-800B0,127 TRIAC 800V 16A TO220AB Investigación
BT137B-800F,118 Image BT137B-800F,118 TRIAC 800V 8A D2PAK Investigación
BYC20DX-600PQ Image BYC20DX-600PQ DIODE GEN PURP 600V 20A TO220F Investigación
TYN16X-600CT,127 Image TYN16X-600CT,127 IC SCR 16A 600V TO-220F Investigación
PHE13005,127 Image PHE13005,127 TRANS NPN 400V 4A TO220AB Investigación
BT169H/01U Image BT169H/01U SCR 10A 800V TO-92 Investigación
BT151X-650R,127 Image BT151X-650R,127 THYRISTOR 650V 12A SOT186A Investigación
BT258-500R,127 Image BT258-500R,127 THYRISTOR 500V 8A TO220AB Investigación
BTA316B-800B,118 Image BTA316B-800B,118 TRIAC 800V 16A D2PAK Investigación
BT139X-800,127 Image BT139X-800,127 TRIAC 800V 16A TO220-3 Investigación
BTA208S-600D,118 Image BTA208S-600D,118 TRIAC SENS GATE 600V 8A DPAK Investigación
BT134W-800,115 Image BT134W-800,115 TRIAC 800V 1A SC73 Investigación
ACT108-600E,126 Image ACT108-600E,126 TRIAC SENS GATE 600V 0.8A TO92-3 Investigación
BTA204X-600C,127 Image BTA204X-600C,127 TRIAC 600V 4A TO220-3 Investigación
BT1308W-400D,135 Image BT1308W-400D,135 TRIAC SENS GATE 400V 0.8A SC73 Investigación
BTA201-800ER,116 Image BTA201-800ER,116 TRIAC SENS GATE 800V 1A TO92-3 Investigación
BTA316B-800C,118 Image BTA316B-800C,118 TRIAC 800V 16A D2PAK Investigación
BYV72EW-200,127 Image BYV72EW-200,127 DIODE ARRAY GP 200V 30A TO247-3 Investigación
BTA225-600BT,127 Image BTA225-600BT,127 TRIAC 600V 25A TO220AB Investigación
ACT108-600E,412 Image ACT108-600E,412 TRIAC SENS GATE 600V 0.8A TO92-3 Investigación
BT134-600E,127 Image BT134-600E,127 TRIAC SENS GATE 600V 4A SOT82-3 Investigación
BTA216B-600F,118 Image BTA216B-600F,118 TRIAC 600V 16A D2PAK Investigación
OT407,126 TRIAC SOT54A Investigación
BTA216B-800B,118 Image BTA216B-800B,118 TRIAC 800V 16A D2PAK Investigación
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