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Global Power Technologies Group

Global Power Technologies Group

- Global Power Technologies Group, Inc. (“GPTG”) founded in 2007 is an integrated development and manufacturing company dedicated to products based on Silicon Carbide (SiC) technologies. These products will be foundational to the power electronics and energy industries in future years where advanced technologies are needed for low cost, highly efficient power generation, conversion and transmission.
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GSXF060A040S1-D3 Image GSXF060A040S1-D3 DIODE FAST REC 400V 60A SOT227 Investigación
GP2M002A065PG Image GP2M002A065PG MOSFET N-CH 650V 1.8A IPAK Investigación
GP2M008A060FGH Image GP2M008A060FGH MOSFET N-CH 600V 7.5A TO220F Investigación
GSXD120A008S1-D3 Image GSXD120A008S1-D3 DIODE SCHOTTKY 80V 120A SOT227 Investigación
GP1M010A080N Image GP1M010A080N MOSFET N-CH 900V 10A TO3PN Investigación
GSXD050A015S1-D3 Image GSXD050A015S1-D3 DIODE SCHOTTKY 150V 50A SOT227 Investigación
GSXD060A015S1-D3 Image GSXD060A015S1-D3 DIODE SCHOTTKY 150V 60A SOT227 Investigación
GP2M004A065FG Image GP2M004A065FG MOSFET N-CH 650V 4A TO220F Investigación
GP2M002A065FG Image GP2M002A065FG MOSFET N-CH 650V 1.8A TO220F Investigación
GP1M011A050HS Image GP1M011A050HS MOSFET N-CH 500V 10A TO220 Investigación
GHXS010A060S-D1E Image GHXS010A060S-D1E MOD SBD BRIDGE 600V 10A SOT227 Investigación
GDP30P120B Image GDP30P120B DIODE SCHOTTKY 1200V 81A TO247-2 Investigación
GP2M008A060HG Image GP2M008A060HG MOSFET N-CH 600V 7.5A TO220 Investigación
GHXS020A060S-D1 Image GHXS020A060S-D1 MOD SBD BRIDGE 600V 20A SOT227 Investigación
GP2M008A060PGH Image GP2M008A060PGH MOSFET N-CH 600V 7.5A IPAK Investigación
GSXF060A020S1-D3 Image GSXF060A020S1-D3 DIODE FAST REC 200V 60A SOT227 Investigación
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